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2SC1590 Silicon NPN Transistor RF Power Output
The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.
WINTransceiver
BEC
Features:
High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25C), PD Collector Power Dissipation (TC = +50C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA 17V 35V 4V 12A 1.5W 12.5W +150C -55 to +150C 10C/W 83C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Power Output Collector Efficiency Symbol Test Conditions Min Typ Max Unit 35 17 4 10 6 60 50 7 70 V V V V(BR)CBO IC = 10mA, IE = 0 V(BR)CEO IC = 50mA, RBE = Infinity V(BR)EBO IE = 5mA, IC = 0 ICBO IEBO hFE PO VCB = 25V IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 13.5V, Pin = 600mW, f = 175MHz
500 A 500 A 180 W %

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